Micron Technology DRAM SDRAM-DDR2, Part #: MT47H128M16RT-25E IT:C TR | Dynamic random access memory | DEX Wind Park Part #: MT46H32M32LFB5-5 IT:B TR

Part #: MT46H32M32LFB5-5 IT:B TR features: • VDD/VDDQ = 1

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Xiilnx FPGA Part #XC7K410T-1FBG900C

Xilinx Field Programmable Gate Array Part #XCKU3P-L1SFVB784I

Micron Technology DRAM SDRAM-DDR2, Part #: MT47H128M16RT-25E IT:C TR | Dynamic random access memory | DEX Wind Park Part #: MT46H32M32LFB5-5 IT:B TRMicron Technology DRAM SDRAM DDR2, Part #: MT47H128M16RT 25E IT: C TR features: VDD = 1. 8V 0. 1V, VDDQ = 1. 8V 0. 1V JEDEC standard 1. 8V I O (SSTL_18 compatible) Differential data strobe (DQS, DQS#) option 4n bit prefetch architecture Duplicate output strobe (RDQS) option for x8 DLL to align DQ and DQS transitions with CK 8 internal banks for concurrent operation Programmable CAS latency (CL) Posted CAS additive latency (AL) WRITE latency = READ